| 1. | Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev
Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。 |
| 2. | At the same time , we also found optical band gap decreases and photosensitivity of a - si : h films increases with the increase of substrate temperature
同时，我们也发现伴随着衬底温度升高，光学带隙减少，光敏性增加。 |
| 3. | On the basis of uv - vis transmissive spectra , the sputtered films have absorption peaks toward longer wavelength , and the calculation shows the lower optical band gap
适当的掺杂量可以产生新的吸收峰,增加对长波段光的吸收,提高光催化效率。 |
| 4. | So , the decrease of optical band gap and the increase of photosensitivity of a - si : h films is the result of the decrease of hydrogen content , especially incorporated as polydride
因此， a - si ： h光学带隙的减少以及光敏性的增加是膜中氢含量尤其是以多氢化合物结合的氢含量减少的结果。 |
| 5. | By using the uv - vis spectrophotometer and data processing , we get to know that the carbon nitride films have a wide optical band gap of 4 . 14ev , which is 2 . 2ev lower than the theoratical band gap of 6 . 6 0 . 5ev
通过数据处理，得到了吸收率谱，从而得出光能隙为4 . 14ev 。比理论计算值6 . 4ev 0 . 5小2 . 2ev 。这是因为我们的样品是由非晶组成的。 |
| 6. | Moreover , the optical band gap was widened with the increase of li / zn moral ratio , but it decreased to 3 . 37ev when li / zn moral ratio came to 0 . 2 , and the optical band gap was independent of mg / zn molar ratios
此外合适量的li ： zflo和（ li ， mg ） ： zflofk膜在可见光区的平均透射率在80以上，而过多的掺入由于带入了的缘故，使得其透过率下降。 |
| 7. | The ultraviolet absorption edge becomes steep and moves to longer wavelength , and the optical band gap decreases . the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained
中性气氛中退火薄膜的电阻率基本不变,在真空和还原气氛中薄膜的导电能力增强,而在氧化气氛中薄膜的电阻显著增加了七个数量级,成为绝缘薄膜。 |
| 8. | Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films . the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films
光吸收特性研究表明，因量子限域效应，对于ge - sio _ 2薄膜观察到较强的光吸收和光吸收边随ge颗粒尺寸变小而蓝移的现象。 |
| 9. | The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra . both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films . it was observed that eg decreased with an increase in the deposition pressure
采用紫外-可见光分光光度计测定了纳米- sic薄膜透射光谱和反射光谱，并通过样品的透射光谱和反射光谱计算了纳米- sic薄膜吸收吸收系数和光学带隙eto实验结果表明，增大工作气压导致纳米- sic薄膜的光学带隙的减小。 |
| 10. | Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process . the films were characterized by fourier transform infrared ( ftir ) spectroscopy . the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step . the absorption coefficient was calculated from te ( ) and re ( ) . the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg
本文还研究了立方相含量与光学带隙的关系，在n型si ( 111 )片和熔融石英片上沉积出不同体积分数的立方氮化硼薄膜，薄膜的成分由傅立叶红外吸收谱标识；用紫外-可见分光光度计测量了沉积在石英片上的bn薄膜的透射光谱te ( )和反射光谱re ( ) ，薄膜的厚度用台阶仪测得。 |
